IFS200B12N3E4_B31 - IGBT
Technische Information / Technical Information IGBT-Modul IGBT-Module IFS200B12N3E4_B31 MIPAQ™base Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled HE Diode und NTC / Strommesswiderstand MIPAQ™base module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and NTC / shunt VCES = 1200V IC nom = 200A / ICRM = 400A Typische Anwendungen Motorantriebe Servoumrichter Elektrische Eigenschaften Niedrige Schaltverluste Niedriges VCEsat
IFS200B12N3E4_B31 Features
* Low switching losses
* Low VCEsat
* Tvj op = 150°C Mechanical Features
* High power and thermal cycling capability
* Isolated base plate
* Copper base plate
* Solder contact technology
* Standard housing Module Label Code Barcode Cod
