IFS200B12N3E4_B31 Datasheet - Infineon

IFS200B12N3E4_B31 IGBT

Technische Information / Technical Information IGBT-Modul IGBT-Module IFS200B12N3E4_B31 MIPAQ™base Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled HE Diode und NTC / Strommesswiderstand MIPAQ™base module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and NTC / shunt VCES = 1200V IC nom = 200A / ICRM = 400A Typische Anwendungen Motorantriebe Servoumrichter Elektrische Eigenschaften Niedrige Schaltverluste Niedriges VCEsat .

IFS200B12N3E4_B31 Features

* Low switching losses

* Low VCEsat

* Tvj op = 150°C Mechanical Features

* High power and thermal cycling capability

* Isolated base plate

* Copper base plate

* Solder contact technology

* Standard housing Module Label Code Barcode Cod

IFS200B12N3E4_B31-Infineon.pdf