Description
OptiMOSTM3 Power-Transistor .
Features
* Optimized technology for synchronous rectification
* Ideal for high frequency switching and DC/DC converters
* Excellent gate charge x R DS(on) product (FOM)
Product Summary V DS R DS(on),max ID
* Very low on-resistance RDS(on)
* N-channel, normal level
Applications
* Halogen-free according to IEC61249-2-21
Type
IPB031NE7N3 G
IPB031NE7N3 G
75 V 3.1 mΩ 100 A
Package Marking
PG-TO263-3 031NE7N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
T C=25 °C2)
T C=100 °C
Pulsed drain
