IPB035N12NM6 MOSFET

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Description

IPB035N12NM6 MOSFET OptiMOSTM 6 Power-Transistor, 120 V .

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Datasheet Specifications

Part number: IPB035N12NM6
Manufacturer: Infineon ↗
File Size: 1.14 MB
Datasheet: IPB035N12NM6-Infineon.pdf
Description: MOSFET

Features

* N-channel, normal level
* Very low on-resistance RDS(on)
* Excellent gate charge x RDS(on) product (FOM)
* Very low reverse recovery charge (Qrr)
* High avalanche energy rating
* 175°C operating temperature
* Optimized for high frequency swit

Applications

* Table 1 Key Performance Parameters Parameter Value Unit VDS 120 V RDS(on),max 3.5 mΩ ID 138 A Qoss 137 nC QG (0V10V) 58 nC Qrr (1000A/µs) 263 nC D²PAK tab 2 1 3 Drain Pin 2, Tab Gate Pin 1 Source Pin 3 Type / Ordering Code IPB035N12NM6 Package PG-TO263-3 Marking 035

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IPB035N12NM6 MOSFET Infineon

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