Datasheet Details
- Part number
- IPA037N08N3G
- Manufacturer
- Infineon ↗ Technologies
- File Size
- 374.34 KB
- Datasheet
- IPA037N08N3G_InfineonTechnologies.pdf
- Description
- Power-Transistor
IPA037N08N3G Description
OptiMOS(TM)3 Power-Transistor .
IPA037N08N3G Features
* Ideal for high frequency switching and sync. rec.
* Optimized technology for DC/DC converters
* Excellent gate charge x R DS(on) product (FOM)
* Very low on-resistance RDS(on)
* N-channel, normal level
* 100% avalanche tested
* Pb-free platin
IPA037N08N3G Applications
* Halogen-free according to IEC61249-2-21
Type
IPA037N08N3 G
Product Summary VDS RDS(on),max ID
IPA037N08N3 G
80 V 3.7 mW 75 A
Package Marking
PG-TO220-FP 037N08N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Continuous drain current
P
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