Datasheet Details
- Part number
- IPD068N10N3G
- Manufacturer
- Infineon ↗ Technologies
- File Size
- 483.00 KB
- Datasheet
- IPD068N10N3G-InfineonTechnologies.pdf
- Description
- Power-Transistor
IPD068N10N3G Description
IPD068N10N3 G OptiMOS®3 Power-Transistor .
IPD068N10N3G Features
* N-channel, normal level
* Excellent gate charge x R DS(on) product (FOM)
* Very low on-resistance R DS(on)
Product Summary VDS RDS(on),max ID
* 175 °C operating temperature
* Pb-free lead plating; RoHS compliant
* Qualified according to JEDEC1) f
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