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ITCH27100B2 Datasheet - Innogration

High Power RF LDMOS FET

ITCH27100B2 Features

* High Efficiency and Linear Gain Operations

* Integrated ESD Protection

* Internally Matched for Ease of Use

* Excellent thermal stability, low HCI drift

* Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation

* Pb-free, RoHS-compliant Table

ITCH27100B2 General Description

The ITCH27100B2 is a 100-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 2500 to 2700 MHz. It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats. ITCH27100B2 *Typ.

ITCH27100B2 Datasheet (921.46 KB)

Preview of ITCH27100B2 PDF

Datasheet Details

Part number:

ITCH27100B2

Manufacturer:

Innogration

File Size:

921.46 KB

Description:

High power rf ldmos fet.
Innogration (Suzhou) Co., Ltd. Document Number: ITCH27100B2 Preliminary Datasheet V1.0 2500MHz-2700MHz, 100W, 28V High Power RF LDMOS FETs Descript.

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Stock and price

Distributor
Renesas Electronics Corporation
RAA211250GNP#HA0
976 In Stock
Qty : 1000 units
Unit Price : $1.25

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ITCH27100B2 High Power LDMOS FET Innogration

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