IRF6617

HEXFET Power MOSFET

International Rectifier

IRF6617 Features

* river Gate Drive + P.W. Period D= P.W. Period VGS=10V

* + Circuit Layout Considerations

* Low Stray Inductance

* Ground Plane

* Low Leakage Inductance Current Transformer

* D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. V

IRF6617 General Description

The IRF6617 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used.

IRF6617 Datasheet (170.61 KB)

IRF6617 Datasheet Preview — Preview of IRF6617 PDF

Datasheet Details

Part number:

IRF6617

Manufacturer:

International Rectifier

File Size:

170.61 KB

Description:

Hexfet power mosfet.
PD - 95847 IRF6617 l l l l l l l Application Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses Low Pro.

📁 Related Datasheet

IRF6610 HEXFET Power MOSFET Silicon Technology (International Rectifier)

IRF6611 DirectFET Power MOSFET (International Rectifier)

IRF6611PbF DirectFET Power MOSFET (International Rectifier)

IRF6611TRPbF DirectFET Power MOSFET (International Rectifier)

IRF6612 HEXFET Power MOSFET (International Rectifier)

IRF6612PbF MOSFET (International Rectifier)

IRF6612TR1 HEXFET Power MOSFET (International Rectifier)

IRF6613 HEXFET Power MOSFET (International Rectifier)

IRF6613PBF Power MOSFET (International Rectifier)

IRF6613TRPBF Power MOSFET (International Rectifier)

TAGS

IRF6617 HEXFET Power MOSFET International Rectifier

Image Gallery

IRF6617 Features

IRF6617 General Description

Datasheet Details

File Size:

Description:

IRF6617 Distributor