IRF6617 Datasheet - International Rectifier

IRF6617 HEXFET Power MOSFET

The IRF6617 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used.

IRF6617 Features

* river Gate Drive + P.W. Period D= P.W. Period VGS=10V

* + Circuit Layout Considerations

* Low Stray Inductance

* Ground Plane

* Low Leakage Inductance Current Transformer

* D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. V

IRF6617_InternationalRectifier.pdf