IRF6617 HEXFET Power MOSFET

International Rectifier

Description

PD - 95847 IRF6617 l l l l l l l Application Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses Low Pro.
The IRF6617 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resista.

📥 Download Datasheet

IRF6617 Datasheet Preview — Preview of IRF6617 PDF

Datasheet Specifications

Part number: IRF6617
Manufacturer: International Rectifier
File Size: 170.61 KB
Datasheet: IRF6617_InternationalRectifier.pdf
Description: HEXFET Power MOSFET

Features

* river Gate Drive + P. W. Period D= P. W. Period VGS=10V
* + Circuit Layout Considerations
* Low Stray Inductance
* Ground Plane
* Low Leakage Inductance Current Transformer
* D. U. T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D. U. T. V

Applications

* PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best t

IRF6617 Distributors

📁 Related Datasheet

IRF6643TRPbF IRF6644PbF IRF6648PbF IRF6648TRPbF IRF6662PbF IRF6662TRPbF

📌 All Tags

IRF6617 HEXFET Power MOSFET International Rectifier

International Rectifier IRF6617-like datasheet