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IRF6617PBF

Power MOSFET

IRF6617PBF Features

* ig 14b. Unclamped Inductive Waveforms + VDD D.U.T VGS Pulse Width < 1µs Duty Factor < 0.1% 90% VDS 10% VGS td(on) tr td(off) tf Fig 15a. Switching Time Test Circuit Current Regulator Same Type as D.U.T. Fig 15b. Switching Time Waveforms Id Vds Vgs 50KΩ 12V .2µF .3µF D.U.T. VGS 3mA + V - DS

IRF6617PBF General Description

The IRF6617PbF combines the latest HEXFET® power MOSFET silicon technology with advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a Micro8™ and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used .

IRF6617PBF Datasheet (261.09 KB)

Preview of IRF6617PBF PDF

Datasheet Details

Part number:

IRF6617PBF

Manufacturer:

International Rectifier

File Size:

261.09 KB

Description:

Power mosfet.
PD -97082 IRF6617PbF IRF6617TRPbF l l l l l l l l l RoHS Compliant ‰ Lead-Free (Qualified up to 260°C Reflow) Application Specific MOSFETs Ideal for.

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IRF6617PBF Power MOSFET International Rectifier

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