IRF6623 HEXFET Power MOSFET

International Rectifier

Description

PD - 95824B IRF6623 l l l l l l l Application Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses Low Pr.
The IRF6623 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resista.

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IRF6623 Datasheet Preview — Preview of IRF6623 PDF

Datasheet Specifications

Part number: IRF6623
Manufacturer: International Rectifier
File Size: 170.43 KB
Datasheet: IRF6623_InternationalRectifier.pdf
Description: HEXFET Power MOSFET

Features

* river Gate Drive + P. W. Period D= P. W. Period VGS=10V
* + Circuit Layout Considerations
* Low Stray Inductance
* Ground Plane
* Low Leakage Inductance Current Transformer
* D. U. T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D. U. T. V

Applications

* PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best t

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IRF6623 HEXFET Power MOSFET International Rectifier

International Rectifier IRF6623-like datasheet