IRF6674TRPBF Datasheet - International Rectifier

IRF6674TRPBF, Power MOSFET

PD - 97133 IRF6674TRPbF DirectFET Power MOSFET Typical values (unless otherwise specified) RoHS Compliant l Lead-Free (Qualified up to 260°C Re.
The IRF6674PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resi.

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Datasheet Details

Part number:

IRF6674TRPBF

Manufacturer:

International Rectifier

File Size:

272.90 KB

Description:

Power MOSFET

Features

* rce Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 14 12 5.0 Fig11. Maximum Safe Operating Area VGS(th) Gate threshold Voltage (V) 4.5 ID , Drain Current (A) 10 8 6 4 2 0 25 50 75 100 125 150 4.0 3.5 ID = 250μA ID = 100μA 3.0 2.5 2.0 -75 -50 -25 0 25 50 75 100 125 150 TJ

Applications

* PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best t

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IRF6674TRPBF Power MOSFET International Rectifier

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