IRF6678 Datasheet - International Rectifier

IRF6678 Power MOSFET

The IRF6678 combines the latest HEXFET® power MOSFET silicon technology with advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in pow.

PD - 96979B IRF6678 DirectFET™ Power MOSFET Low Profile (<0.7 mm) Dual Sided Cooling Compatible Ultra Low Package Inductance Optimized for High Frequency Switching Ideal for CPU Core DC-DC Converters Typical values (unless otherwise specified) VDSS VGS RDS(on) RDS(on) 30V max ±20V max 1.7mΩ@ 10V 2.3mΩ@ 4.5V Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) 43nC 15nC 4.0nC 46nC 28nC 1.8V Optimized for for SyncFET Socket of Sync. Buck Converter Low Conduction and Switching Losses Compatible with E.

IRF6678_InternationalRectifier.pdf