IRF6678 Datasheet - International Rectifier

IRF6678 Power MOSFET

The IRF6678 combines the latest HEXFET® power MOSFET silicon technology with advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in pow.

PD - 96979B IRF6678 DirectFET™ Power MOSFET Low Profile (<0.7 mm) Dual Sided Cooling Compatible Ultra Low Package Inductance Optimized for High Frequency Switching Ideal for CPU Core DC-DC Converters Typical values (unless otherwise specified) VDSS VGS RDS(on) RDS(on) 30V max ±20V max 1.7mΩ@ 10V 2.3mΩ@ 4.5V Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) 43nC 15nC 4.0nC 46nC 28nC 1.8V Optimized for for SyncFET Socket of Sync. Buck Converter Low Conduction and Switching Losses Compatible with E.

IRF6678 Datasheet (253.31 KB)