IRF6678PbF Datasheet - International Rectifier

IRF6678PbF, DirectFET Power MOSFET

RoHs Compliant Lead-Free (Qualified up to 260°C Reflow) l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses.
The IRF6678PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resi.

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Datasheet Details

Part number:

IRF6678PbF

Manufacturer:

International Rectifier

File Size:

280.23 KB

Description:

DirectFET Power MOSFET

Features

* 40 ID, Drain Current (A) Limited By Package 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 ID = 250µA 120 100 80 60 40 20 0 25 50 75 100 125 150 T C , Case Temperature (°C) -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C ) Fig 12. Maximum Drain Current vs. Case Temperature 900 EAS , Single Puls

Applications

* PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best therma

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IRF6678PbF DirectFET Power MOSFET International Rectifier

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