IRF6678PbF Datasheet - International Rectifier

DirectFET Power MOSFET

IRF6678PbF Features

* 40 ID, Drain Current (A) Limited By Package 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 ID = 250µA 120 100 80 60 40 20 0 25 50 75 100 125 150 T C , Case Temperature (°C) -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C ) Fig 12. Maximum Drain Current vs. Case Temperature 900 EAS , Single Puls

IRF6678PbF General Description

The IRF6678PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used.

IRF6678PbF Datasheet (280.23 KB)

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IRF6678PbF

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International Rectifier

File Size:

280.23 KB

Description:

Directfet power mosfet.
RoHs Compliant Lead-Free (Qualified up to 260°C Reflow) l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses.

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IRF6678PbF DirectFET Power MOSFET International Rectifier

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IRF6678PbF Features

IRF6678PbF General Description

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