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IRF6678TRPbF, IRF6678PbF DirectFET Power MOSFET

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Description

RoHs Compliant  Lead-Free (Qualified up to 260°C Reflow) l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses.
The IRF6678PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resi.

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This datasheet PDF includes multiple part numbers: IRF6678TRPbF, IRF6678PbF. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
IRF6678TRPbF, IRF6678PbF
Manufacturer
International Rectifier
File Size
280.23 KB
Datasheet
IRF6678PbF_InternationalRectifier.pdf
Description
DirectFET Power MOSFET
Note
This datasheet PDF includes multiple part numbers: IRF6678TRPbF, IRF6678PbF.
Please refer to the document for exact specifications by model.

Features

* 40 ID, Drain Current (A) Limited By Package 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 ID = 250µA 120 100 80 60 40 20 0 25 50 75 100 125 150 T C , Case Temperature (°C) -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C ) Fig 12. Maximum Drain Current vs. Case Temperature 900 EAS , Single Puls

Applications

* PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best therma

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