* 00 6 C oss 200 4 C rs s 100 2 0 1 10 100 A 0 0 2 4 FOR TES T C IR C U IT SE E FIG U R E 19 6 8 10 A -V D S , D rain-to-S ource V oltage (V ) Q G , Total G ate C h arge (nC ) Fig 19. Typical Capacitance Vs. Drain-to-Source Voltage N-P - Channel 1000 Fig 20. Typical Gate Charge Vs. Gate-
IRF7507
International Rectifier
216.02 KB
Power mosfet.
PD - 91269I
IRF7507
HEXFET® Power MOSFET
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Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Very Small SOIC P.
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