Datasheet Specifications
- Part number
- IRF7507
- Manufacturer
- International Rectifier
- File Size
- 216.02 KB
- Datasheet
- IRF7507_InternationalRectifier.pdf
- Description
- Power MOSFET
Description
PD - 91269I IRF7507 HEXFET® Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Very Small SOIC P.
Features
* 00 6 C oss 200 4 C rs s 100 2 0 1 10 100 A 0 0 2 4 FOR TES T C IR C U IT SE E FIG U R E 19 6 8 10 A -V D S , D rain-to-S ource V oltage (V ) Q G , Total G ate C h arge (nC ) Fig 19. Typical Capacitance Vs. Drain-to-Source Voltage N-P - Channel 1000 Fig 20. Typical Gate Charge Vs. Gate-Applications
* The new Micro8 package, with half the footprint area of the standard SO-8, provides the smallest footprint available in an SOIC outline. This makes the Micro8 an ideal device for applications where printed circuit board space is at a premium. The low profile (IRF7507 Distributors
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