IRF7507 Datasheet - International Rectifier

IRF7507 Power MOSFET

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer .

IRF7507 Features

* 00 6 C oss 200 4 C rs s 100 2 0 1 10 100 A 0 0 2 4 FOR TES T C IR C U IT SE E FIG U R E 19 6 8 10 A -V D S , D rain-to-S ource V oltage (V ) Q G , Total G ate C h arge (nC ) Fig 19. Typical Capacitance Vs. Drain-to-Source Voltage N-P - Channel 1000 Fig 20. Typical Gate Charge Vs. Gate-

IRF7507 Datasheet (216.02 KB)