IRF7507PBF Datasheet, Mosfet, International Rectifier

IRF7507PBF Features

• Mosfet ain Current (A) 100 OPERATION IN THIS AREA LIMITED BY RDS(on) 10 100us 1ms 1 10ms TC = 25 °C TJ = 150 °C Single Pulse 0.1 1 10 -VDS, Drain-to-Source Voltage (V) 100 -VGS , Gate-

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Part number:

IRF7507PBF

Manufacturer:

International Rectifier

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210.46kb

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📄 Datasheet

Description:

Power mosfet. Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance

IRF7507PBF Application

• Applications N-Ch P-Ch VDSS 20V -20V RDS(on) 0.135Ω 0.27Ω The new Micro8 package, with half the footprint area of the standard SO-8, provides the

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IRF7507PBF

International Rectifier

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