IRF7507PBF Datasheet - International Rectifier

IRF7507PBF Power MOSFET

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer.

IRF7507PBF Features

* Voltage Thermal Response (Z thJA) 100 D = 0.50 0.20 10 0.10 0.05 0.02 0.01 1 0.1 0.00001 SINGLE PULSE (THERMAL RESPONSE) 0.0001 0.001 PDM t1 t2 Notes: 1. Duty factor D = t1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.01 0.1 t1, Rectangular Pulse Duration (sec) 1 10 100 Fig 21. Maximum Eff

IRF7507PBF Datasheet (210.46 KB)