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IRF7507PBF

Power MOSFET

IRF7507PBF Features

* Voltage Thermal Response (Z thJA) 100 D = 0.50 0.20 10 0.10 0.05 0.02 0.01 1 0.1 0.00001 SINGLE PULSE (THERMAL RESPONSE) 0.0001 0.001 PDM t1 t2 Notes: 1. Duty factor D = t1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.01 0.1 t1, Rectangular Pulse Duration (sec) 1 10 100 Fig 21. Maximum Eff

IRF7507PBF General Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer.

IRF7507PBF Datasheet (210.46 KB)

Preview of IRF7507PBF PDF

Datasheet Details

Part number:

IRF7507PBF

Manufacturer:

International Rectifier

File Size:

210.46 KB

Description:

Power mosfet.
PD - 95218 IRF7507PbF HEXFET® Power MOSFET l Generation V Technology l Ultra Low On-Resistance l Dual N and P Channel MOSFET l Very Small SOIC Packa.

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IRF7507PBF Power MOSFET International Rectifier

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