Datasheet Specifications
- Part number
- IRF7507PBF
- Manufacturer
- International Rectifier
- File Size
- 210.46 KB
- Datasheet
- IRF7507PBF-InternationalRectifier.pdf
- Description
- Power MOSFET
Description
PD - 95218 IRF7507PbF HEXFET® Power MOSFET l Generation V Technology l Ultra Low On-Resistance l Dual N and P Channel MOSFET l Very Small SOIC Packa.
Features
* Voltage Thermal Response (Z thJA) 100 D = 0.50 0.20 10 0.10 0.05 0.02 0.01 1 0.1 0.00001 SINGLE PULSE (THERMAL RESPONSE) 0.0001 0.001 PDM t1 t2 Notes: 1. Duty factor D = t1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.01 0.1 t1, Rectangular Pulse Duration (sec) 1 10 100 Fig 21. Maximum EffApplications
* N-Ch P-Ch VDSS 20V -20V RDS(on) 0.135Ω 0.27Ω The new Micro8 package, with half the footprint area of the standard SO-8, provides the smallest footprint available in an SOIC outline. This makes the Micro8 an ideal device for applications where printed circuit board space is at a premium. The low pIRF7507PBF Distributors
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