IRF7555

Power MOSFET

International Rectifier

IRF7555 Features

* Data and specifications subject to change without notice. 2/2000 www.irf.com 7

IRF7555 General Description

New trench HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremel.

IRF7555 Datasheet (71.58 KB)

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Datasheet Details

Part number:

IRF7555

Manufacturer:

International Rectifier

File Size:

71.58 KB

Description:

Power mosfet.
PD -91865B IRF7555 HEXFET® Power MOSFET Trench Technology q Ultra Low On-Resistance q Dual P-Channel MOSFET q Very Small SOIC Package q Low Profile (.

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IRF7555 Power MOSFET International Rectifier

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IRF7555 Features

IRF7555 General Description

Datasheet Details

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