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IRF7555PBF Power MOSFET

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Description

PD -95993 IRF7555PbF l Trench Technology l Ultra Low On-Resistance l Dual P-Channel MOSFET l Very Small SOIC Package l Low Profile (<1.1mm) l Availa.
New trench HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silico.

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Features

* shown in millimeters (inches) TERMINAL NUMBER 1 IRF7555PbF 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) NOTES: 1. OUTLINE CONFORMS TO EIA-481 & EIA-541. 2. CONTROLLING DIMENSION : MILLIMETER. FEED DIRECTION 330.00 (12.992) MAX. NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE

Applications

* HEXFET® Power MOSFET 1 8 D1 2 7 D1 3 6 D2 4 5 D2 Top View VDSS = -20V RDS(on) = 0.055Ω The new Micro8™ package has half the footprint area of the standard SO-8. This makes the Micro8 an ideal package for applications where printed circuit board space is at a premium. The low profile (

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