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IRF7555PBF

Power MOSFET

IRF7555PBF Features

* shown in millimeters (inches) TERMINAL NUMBER 1 IRF7555PbF 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) NOTES: 1. OUTLINE CONFORMS TO EIA-481 & EIA-541. 2. CONTROLLING DIMENSION : MILLIMETER. FEED DIRECTION 330.00 (12.992) MAX. NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE

IRF7555PBF General Description

New trench HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely.

IRF7555PBF Datasheet (118.99 KB)

Preview of IRF7555PBF PDF

Datasheet Details

Part number:

IRF7555PBF

Manufacturer:

International Rectifier

File Size:

118.99 KB

Description:

Power mosfet.
PD -95993 IRF7555PbF l Trench Technology l Ultra Low On-Resistance l Dual P-Channel MOSFET l Very Small SOIC Package l Low Profile (<1.1mm) l Availa.

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IRF7555PBF Power MOSFET International Rectifier

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