IRF7831 Datasheet - International Rectifier

IRF7831 HEXFET Power MOSFET

PD - 94636 IRF7831 HEXFET® Power MOSFET Applications l High Frequency Point-of-Load Synchronous Buck Converter for Applications in Networking & Computing Systems. Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current VDSS RDS(on) max 30V 3.6m @VGS = 10V : Qg (typ.) 40nC S S S G 1 8 7 A A D D D D 2 3 6 4 5 Top View SO-8 Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @T.

IRF7831 Features

* h generate losses that are transfered to Q1 and increase the dissipation in that device. Thirdly, gate charge will impact the MOSFETs’ susceptibility to Cdv/dt turn on. The drain of Q2 is connected to the switching node of the converter and therefore sees transitions between ground and Vin. As Q1 tu

IRF7831_InternationalRectifier.pdf