IRF7831PBF Datasheet - International Rectifier

IRF7831PBF Power MOSFET

Applications l High Frequency Point-of-Load Synchronous Buck Converter for Applications in Networking & Computing Systems. Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current l 100% Tested for RG l Lead-Free PD - 95134B IRF7831PbF HEXFET® Power MOSFET VDSS RDS(on) max Qg (typ.) 30V 3.6m:@VGS = 10V 40nC S1 S2 S3 G4 AA 8D 7D 6D 5D Top View SO-8 Absolute Maximum Ratings Parameter VDS Drain-to-Source Voltage VGS ID @ TA =.

IRF7831PBF Features

* seen from Fig 16. Qgs2 indicates the charge that must be supplied by the gate driver between the time that the threshold voltage has been reached and the time the drain current rises to Idmax at which time the drain voltage begins to change. Minimizing Qgs2 is a critical factor in reducing switchin

IRF7831PBF Datasheet (261.12 KB)