IRF7832Z Datasheet - International Rectifier

IRF7832Z Power MOSFET

PD - 96975A IRF7832Z Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters VDSS 30V Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current l 20V VGS Max. Gate Rating l 100% tested for Rg S S S G HEXFET® Power MOSFET RDS(on) max Qg :3.8m @VGS = 10V 30nC AA 1 8D 2 7D 3 6D 4 5D Top View SO-8 Absolute Maximum Ratings Parameter VDS Drain-to-Source Voltage .

IRF7832Z Features

* sheets. The importance of splitting this gate-source charge into two sub elements, Qgs1 and Qgs2, can be seen from Fig 16. Qgs2 indicates the charge that must be supplied by the gate driver between the time that the threshold voltage has been reached and the time the drain current rises to Idmax at

IRF7832Z Datasheet (262.56 KB)