IRF7832PBF Datasheet - International Rectifier

IRF7832PBF HEXFET Power MOSFET

PD - 95016A IRF7832PbF HEXFET® Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems l Lead-Free Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current l 20V VGS Max. Gate Rating l 100% tested for Rg VDSS 30V 4.0m:@VGS = 10V 1 2 3 4 8 7 RDS(on) max Qg 34nC S S S G A A D D D D 6 5 Top View SO-8 www.DataSheet4U.com Abso.

IRF7832PBF Features

* Secondly, the output charge Qoss and reverse recovery charge Qrr both generate losses that are transfered to Q1 and increase the dissipation in that device. Thirdly, gate charge will impact the MOSFETs’ susceptibility to Cdv/dt turn on. The drain of Q2 is connected to the switching node of the conve

IRF7832PBF Datasheet (288.91 KB)