IRF7832 Datasheet (International Rectifier)

IRF7832, HEXFET Power MOSFET

PD - 94594E IRF7832 Applications l Synchronous MOSFET for Notebook VDSS Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in 30V Networking Systems Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance S S S l Fully Characterized Avalanche Voltage G and Current l 20V VGS Max.

Gate Rating l 100% tested for Rg HEXFET® Power MOSFET RDS(on) max Qg :4.0m @VGS = 10V 34nC AA 1 8D 2 7D 3 6D 4 5D Top View SO-8 Absolute Maximum Ratings Parameter

IRF7832 Features

* age has been reached and the time the drain current rises to Idmax at which time the drain voltage begins to change. Minimizing Qgs2 is a critical factor in reducing switching losses in Q1. Qoss is the charge that must be supplied to the output capacitance of the MOSFET during every switching cycle.