IRF7832 Datasheet - International Rectifier

IRF7832 HEXFET Power MOSFET

PD - 94594E IRF7832 Applications l Synchronous MOSFET for Notebook VDSS Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in 30V Networking Systems Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance S S S l Fully Characterized Avalanche Voltage G and Current l 20V VGS Max. Gate Rating l 100% tested for Rg HEXFET® Power MOSFET RDS(on) max Qg :4.0m @VGS = 10V 34nC AA 1 8D 2 7D 3 6D 4 5D Top View SO-8 Absolute Maximum Ratings Parameter .

IRF7832 Features

* age has been reached and the time the drain current rises to Idmax at which time the drain voltage begins to change. Minimizing Qgs2 is a critical factor in reducing switching losses in Q1. Qoss is the charge that must be supplied to the output capacitance of the MOSFET during every switching cycle.

IRF7832 Datasheet (259.66 KB)