IRF7Y1405CM Datasheet - International Rectifier

IRF7Y1405CM Power MOSFET

PD - 94449 HEXFET® POWER MOSFET THRU-HOLE (TO-257AA) IRF7Y1405CM 55V, N-CHANNEL Product Summary Part Number IRF7Y1405CM BVDSS 55V RDS(on) ID 0.0153Ω 18A Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an e.

IRF7Y1405CM Features

* n n n n n n n Low RDS(on) Avalanche Energy Ratings Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuo

IRF7Y1405CM_InternationalRectifier.pdf