IRF7YSZ44VCM Datasheet - International Rectifier

IRF7YSZ44VCM Power MOSFET

PD - 94603 HEXFET® POWER MOSFET THRU-HOLE (Low-ohmic TO-257AA) IRF7YSZ44VCM 60V, N-CHANNEL Product Summary Part Number IRF7YSZ44VCM BVDSS 60V RDS(on) ID 0.0195Ω 20A Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the design.

IRF7YSZ44VCM Features

* n n n n n n n Low RDS(on) Avalanche Energy Ratings Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuo

IRF7YSZ44VCM_InternationalRectifier.pdf