Part number: IRF9Z24S
Manufacturer: International Rectifier
File Size: 311.02KB
Download: 📄 Datasheet
Description: Power MOSFET
3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to cha.
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest powe.
l l
D
VDSS = -60V RDS(on) = 0.28Ω
G
ID = -11A
S
Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching .
Image gallery
TAGS
📁 Related Datasheet
IRF9Z24 - POWER MOSFET
(International Rectifier)
.
IRF9Z24L - Power MOSFET
(International Rectifier)
PD - 9.912A
IRF9Z24S/L
HEXFET® Power MOSFET
Advanced Process Technology Surface Mount (IRF9Z24S) l Low-profile through-hole (IRF9Z24L) l 175°C Operat.
IRF9Z24L - Power MOSFET
(Vishay)
IRF9Z24S, SiHF9Z24S, IRF9Z24L, SiHF9Z24L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC)
- 60 VGS = - 10 V
19
Qgs.
IRF9Z24N - Power MOSFET
(International Rectifier)
PD -9.1484B
IRF9Z24N
HEXFET® Power MOSFET
Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel.
IRF9Z24NL - Power MOSFET
(International Rectifier)
PD - 91742A
IRF9Z24NS/L
HEXFET® Power MOSFET
Advanced Process Technology Surface Mount (IRF9Z24NS) l Low-profile through-hole (IRF9Z24NL) l 175°C Ope.
IRF9Z24NLPBF - Power MOSFET
(International Rectifier)
Lead-Free
PD- 95770
IRF9Z24NSPbF IRF9Z24NLPBF
www.irf.com
1 04/25/05
IRF9Z24NS/LPbF
2 www.irf.com
IRF9Z24NS/LPbF
www.irf.com
3
IRF9Z24NS/LPb.
IRF9Z24NPBF - HEXFET Power MOSFET
(International Rectifier)
• Lead-Free
PD - 94982
IRF9Z24NPbF
www.irf.com
1 02/05/04
IRF9Z24NPbF
2
www.irf.com
IRF9Z24NPbF
www.irf.com
3
IRF9Z24NPbF
4
www.irf.com
I.
IRF9Z24NS - Power MOSFET
(International Rectifier)
l Advanced Process Technology
l Surface Mount (IRF9Z24NS)
l Low-profile through-hole (IRF9Z24NL)
l 175°C Operating Temperature
l P-Channel
G
l F.
IRF9Z24NS - P-Channel MOSFET
(VBsemi)
IRF9Z24NS
IRF9Z24NS Datasheet P-Channel 60 V (D-S) MOSFET
www.VBsemi.com
PRODUCT SUMMARY
VDS (V)
RDS(on) () Max.
0.048at VGS = - 10 V - 60
0.06.
IRF9Z24NSPbF - Power MOSFET
(International Rectifier)
Lead-Free
PD- 95770
IRF9Z24NSPbF IRF9Z24NLPBF
www.irf.com
1 04/25/05
IRF9Z24NS/LPbF
2 www.irf.com
IRF9Z24NS/LPbF
www.irf.com
3
IRF9Z24NS/LPb.
