IRF9Z24S

Power MOSFET

International Rectifier

IRF9Z24S General Description

l l D VDSS = -60V RDS(on) = 0.28Ω G ID = -11A S Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Pow.

IRF9Z24S Datasheet (311.02 KB)

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IRF9Z24S

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International Rectifier

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311.02 KB

Description:

Power mosfet.
PD - 9.912A IRF9Z24S/L HEXFET® Power MOSFET Advanced Process Technology Surface Mount (IRF9Z24S) l Low-profile through-hole (IRF9Z24L) l 175°C Operat.

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IRF9Z24S Power MOSFET International Rectifier

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IRF9Z24S General Description

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