IRFI1310NPBF Datasheet - International Rectifier

Power MOSFET

IRFI1310NPBF General Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer .

IRFI1310NPBF Datasheet (235.48 KB)

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IRFI1310NPBF

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International Rectifier

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235.48 KB

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Power mosfet.
l Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated l.

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IRFI1310NPBF Power MOSFET International Rectifier

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IRFI1310NPBF General Description

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