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IRG4BC30W-S INSULATED GATE BIPOLAR TRANSISTOR

IRG4BC30W-S Description

PD - 91790 IRG4BC30W-S INSULATED GATE BIPOLAR TRANSISTOR .

IRG4BC30W-S Applications

* Industry-benchmark switching losses improve efficiency of all power supply topologies
* 50% reduction of Eoff parameter
* Low IGBT conduction losses
* Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability C V

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Datasheet Details

Part number
IRG4BC30W-S
Manufacturer
International Rectifier
File Size
188.51 KB
Datasheet
IRG4BC30W-S_InternationalRectifier.pdf
Description
INSULATED GATE BIPOLAR TRANSISTOR

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INSULATED GATE BIPOLAR TRANSISTOR International Rectifier
International Rectifier IRG4BC30W-S-like datasheet