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IRG4IBC10UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

IRG4IBC10UD Description

PD - 93765 IRG4IBC10UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C UltraFast Co-Pack IGBT VCES = 600V VCE(on) typ.= 2.15.

IRG4IBC10UD Features

* UltraFast: Optimized for high operating up to 80 kHz in hard switching, > 200 kHz in resonant mode
* Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation
* IGBT co-packaged with HEXFRED® ultrafast, ultra-soft-recove

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Datasheet Details

Part number
IRG4IBC10UD
Manufacturer
International Rectifier
File Size
199.12 KB
Datasheet
IRG4IBC10UD_InternationalRectifier.pdf
Description
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE International Rectifier
International Rectifier IRG4IBC10UD-like datasheet