* UltraFast: Optimized for high operating up to 80 kHz in hard switching, > 200 kHz in resonant mode
* Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation
* IGBT co-packaged with HEXFRED® ultrafast, ultra-soft-recove
IRG4IBC10UD Datasheet (199.12 KB)
IRG4IBC10UD
International Rectifier
199.12 KB
Insulated gate bipolar transistor with ultrafast soft recovery diode.
PD - 93765
IRG4IBC10UD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
C
UltraFast Co-Pack IGBT
VCES = 600V VCE(on) typ. = 2.15.
📁 Related Datasheet
IRG4IBC20FDPBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRG4IBC20KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE (International Rectifier)
IRG4IBC20KDPBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRG4IBC20UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE (International Rectifier)
IRG4IBC20UDPBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRG4IBC20W INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRG4IBC20WPBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRG4IBC30FD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE (International Rectifier)
IRG4IBC30KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE (International Rectifier)
IRG4IBC30KDPBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
TAGS
Image Gallery
