IRG4IBC10UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

International Rectifier

Description

PD - 93765 IRG4IBC10UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C UltraFast Co-Pack IGBT VCES = 600V VCE(on) typ.= 2.15.

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Datasheet Specifications

Part number: IRG4IBC10UD
Manufacturer: International Rectifier
File Size: 199.12 KB
Datasheet: IRG4IBC10UD_InternationalRectifier.pdf
Description: INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features

* UltraFast: Optimized for high operating up to 80 kHz in hard switching, > 200 kHz in resonant mode
* Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation
* IGBT co-packaged with HEXFRED® ultrafast, ultra-soft-recove

IRG4IBC10UD Distributors

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IRG4IBC10UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE International Rectifier

International Rectifier IRG4IBC10UD-like datasheet