Part number:
IRG4IBC10UD
Manufacturer:
International Rectifier
File Size:
199.12 KB
Description:
Insulated gate bipolar transistor with ultrafast soft recovery diode.
IRG4IBC10UD Features
* UltraFast: Optimized for high operating up to 80 kHz in hard switching, > 200 kHz in resonant mode
* Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation
* IGBT co-packaged with HEXFRED® ultrafast, ultra-soft-recove
IRG4IBC10UD Datasheet (199.12 KB)
Datasheet Details
IRG4IBC10UD
International Rectifier
199.12 KB
Insulated gate bipolar transistor with ultrafast soft recovery diode.
📁 Related Datasheet
IRG4IBC20FDPBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRG4IBC20KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE (International Rectifier)
IRG4IBC20KDPBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRG4IBC20UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE (International Rectifier)
IRG4IBC20UDPBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRG4IBC20W INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRG4IBC20WPBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRG4IBC30FD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE (International Rectifier)
IRG4IBC30KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE (International Rectifier)
IRG4IBC30KDPBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
TAGS
Image Gallery
IRG4IBC10UD Distributor