IRG4IBC30FD Datasheet - International Rectifier

IRG4IBC30FD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

IRG4IBC30FD Features

* Very Low 1.59V votage drop 2.5kV, 60s insulation voltage 4.8 mm creapage distance to heatsink Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).

* IGBT co-packaged with HEXFREDTM ultrafast, ultras

IRG4IBC30FD_InternationalRectifier.pdf

IRG4IBC30FD Datasheet Preview — Preview of IRG4IBC30FD PDF

Datasheet Details

Part number:

IRG4IBC30FD

Manufacturer:

International Rectifier

File Size:

223.94 KB

Description:

Insulated gate bipolar transistor with ultrafast soft recovery diode.

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IRG4IBC30FD IRG4IBC30FD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE International Rectifier

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