IRG4IBC30FD Datasheet, Diode, International Rectifier

IRG4IBC30FD Features

• Diode
• Very Low 1.59V votage drop 2.5kV, 60s insulation voltage … 4.8 mm creapage distance to heatsink Fast: Optimized for medium operating frequencies

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IRG4IBC30FD

Manufacturer:

International Rectifier

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📄 Datasheet

Description:

Insulated gate bipolar transistor with ultrafast soft recovery diode.

IRG4IBC30FD Application

• Applications for Circuit of Fig. 18a, Defining Eoff, td(off), tf G A T E V O L T A G E D .U .T . 1 0 % +V g +Vg trr Ic Q rr = ∫ trr id d t tx

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