IRG4IBC30KDPBF Datasheet, Transistor, International Rectifier

IRG4IBC30KDPBF Features

• Transistor • High switching speed optimized for up to 25kHz with low VCE(on) • Short Circuit Rating 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides tighter parameter distribution and h

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IRG4IBC30KDPBF

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International Rectifier

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330.14kb

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📄 Datasheet

Description:

Insulated gate bipolar transistor.

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IRG4IBC30KDPBF

International Rectifier

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