Part number:
IRG4IBC30KDPBF
Manufacturer:
International Rectifier
File Size:
330.14 KB
Description:
Insulated gate bipolar transistor.
* High switching speed optimized for up to 25kHz with low VCE(on) Short Circuit Rating 10µs @ 125°C, VGE = 15V Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-par
IRG4IBC30KDPBF Datasheet (330.14 KB)
IRG4IBC30KDPBF
International Rectifier
330.14 KB
Insulated gate bipolar transistor.
📁 Related Datasheet
IRG4IBC30KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE (International Rectifier)
IRG4IBC30FD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE (International Rectifier)
IRG4IBC30S INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRG4IBC30SPBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRG4IBC30UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE (International Rectifier)
IRG4IBC30UDPBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRG4IBC30W INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRG4IBC30WPBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRG4IBC10UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE (International Rectifier)
IRG4IBC20FDPBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)