IRG4IBC30UDPBF Datasheet - International Rectifier

IRG4IBC30UDPBF INSULATED GATE BIPOLAR TRANSISTOR

IRG4IBC30UDPBF Features

* 2.5kV, 60s insulation voltage

* 4.8 mm creapage distance to heatsink

* UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode

* IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery antiparallel diodes

Datasheet Details

IRG4IBC30UDPBF

International Rectifier

315.51 KB

Insulated gate bipolar transistor.

📁 Related Datasheet

IRG4IBC30UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE (International Rectifier)

IRG4IBC30FD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE (International Rectifier)

IRG4IBC30KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE (International Rectifier)

IRG4IBC30KDPBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRG4IBC30S INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRG4IBC30SPBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRG4IBC30W INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRG4IBC30WPBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

TAGS

IRG4IBC30UDPBF Distributor