IRG4IBC30UDPBF Datasheet, Transistor, International Rectifier

✔ IRG4IBC30UDPBF Features

2.5kV, 60s insulation voltage
4.8 mm creapage distance to heatsink
UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in res

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IRG4IBC30UDPBF

International Rectifier

315.51 KB

Insulated gate bipolar transistor.

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Infineon Technologies AG

IGBT 600V 17A TO220AB FP

IRG4IBC30UDPBF

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Unit Price : $0

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