IRG4IBC30UDPBF Datasheet - International Rectifier

INSULATED GATE BIPOLAR TRANSISTOR

* 2.5kV, 60s insulation voltage

* 4.8 mm creapage distance to heatsink

* UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode

* IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery antiparallel diodes

IRG4IBC30UDPBF

International Rectifier

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Insulated gate bipolar transistor.

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