IRG4IBC30UD

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

International Rectifier

* 2.5kV, 60s insulation voltage U

* 4.8 mm creapage distance to heatsink

* UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode

* IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery antiparallel diodes

IRG4IBC30UD

International Rectifier

227.87 KB

Insulated gate bipolar transistor with ultrafast soft recovery diode.

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