IRG4IBC30KD Datasheet - International Rectifier

IRG4IBC30KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

IRG4IBC30KD Features

* High switching speed optimized for up to 25kHz with low VCE(on)

* Short Circuit Rating 10µs @ 125°C, VGE = 15V

* Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation

* IGBT co-packaged with HEXFREDTM ultrafa

Datasheet Details

IRG4IBC30KD

International Rectifier

195.55 KB

Insulated gate bipolar transistor with ultrafast soft recovery diode.

📁 Related Datasheet

IRG4IBC30KDPBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRG4IBC30FD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE (International Rectifier)

IRG4IBC30S INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRG4IBC30SPBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRG4IBC30UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE (International Rectifier)

IRG4IBC30UDPBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRG4IBC30W INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRG4IBC30WPBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

TAGS

IRG4IBC30KD Distributor