IRG4IBC30KD

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

International Rectifier

* High switching speed optimized for up to 25kHz with low VCE(on)

* Short Circuit Rating 10µs @ 125°C, VGE = 15V

* Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation

* IGBT co-packaged with HEXFREDTM ultrafa

IRG4IBC30KD

International Rectifier

195.55 KB

Insulated gate bipolar transistor with ultrafast soft recovery diode.

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