IRG4IBC30KD
International Rectifier
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Insulated gate bipolar transistor with ultrafast soft recovery diode.
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IRG4IBC30KDPBF - INSULATED GATE BIPOLAR TRANSISTOR
(International Rectifier)
PD -95597A
IRG4IBC30KDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
High switching speed optimized for up to 2.
IRG4IBC30FD - INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
(International Rectifier)
PD- 91751A
IRG4IBC30FD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• • • • Very Low 1.59V votage drop 2.5kV, 60s in.
IRG4IBC30S - INSULATED GATE BIPOLAR TRANSISTOR
(International Rectifier)
PD - 94293
IRG4IBC30S
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Standard: Optimized for minimum saturation voltage and low operating freqencies (.
IRG4IBC30SPBF - INSULATED GATE BIPOLAR TRANSISTOR
(International Rectifier)
PD - 95637A
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Standard: Optimized for minimum saturation voltage and low operating freqencies (<1 kHz)
• G.
IRG4IBC30UD - INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
(International Rectifier)
PD91753A
IRG4IBC30UD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• 2.5kV, 60s insulation voltage U • 4.8 mm creapag.
IRG4IBC30UDPBF - INSULATED GATE BIPOLAR TRANSISTOR
(International Rectifier)
PD- 95598A
IRG4IBC30UDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
UltraFast CoPack IGBT
ULTRAFAST SOFT RECOVERY DIODE
Features
• 2.5kV, 60s insulat.
IRG4IBC30W - INSULATED GATE BIPOLAR TRANSISTOR
(International Rectifier)
PD 91791A
IRG4IBC30W
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) .
IRG4IBC30WPBF - INSULATED GATE BIPOLAR TRANSISTOR
(International Rectifier)
PD - 95326
IRG4IBC30WPbF
INSULATED GATE BIPOLAR TRANSISTOR
Features
Benefits
Designed expressly for Switch-Mode Power Supply and PFC (power fact.
IRG4IBC10UD - INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
(International Rectifier)
PD - 93765
IRG4IBC10UD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
C
UltraFast Co-Pack IGBT
VCES = 600V VCE(on) typ. = 2.15.
IRG4IBC20FDPBF - INSULATED GATE BIPOLAR TRANSISTOR
(International Rectifier)
PD -94915A
IRG4IBC20FDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
C
• Very Low 1.66V votage drop
• 2.5kV, .