Part number:
IRG7PH50K10D-EPBF
Manufacturer:
International Rectifier
File Size:
567.79 KB
Description:
Insulated gate bipolar transistor.
IRG7PH50K10D-EPBF Datasheet (567.79 KB)
Datasheet Details
IRG7PH50K10D-EPBF Features
* Low VCE(ON) and switching losses 10µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 150°C Positive VCE (ON) Temperature Coefficient Base part number IRG7PH50K10DPBF IRG7PH50K10D-EPBF Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC =
IRG7PH50K10D-EPBF Datasheet (567.79 KB)
Datasheet Details
IRG7PH50K10D-EPBF
International Rectifier
567.79 KB
Insulated gate bipolar transistor.
📁 Related Datasheet
IRG7PH50K10DPBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRG7PH50U-EP INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRG7PH50UPBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRG7PH28UD1MPBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRG7PH28UD1PBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRG7PH30K10DPBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRG7PH30K10PBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRG7PH35U-EP INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRG7PH35U-EP INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRG7PH35UD-EP INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRG7PH50K10D-EPBF Distributor
