Datasheet Details
Part number:
IRG7PH50K10D-EPBF
Manufacturer:
International Rectifier
File Size:
567.79 KB
Description:
Insulated gate bipolar transistor.
IRG7PH50K10D-EPBF-InternationalRectifier.pdf
IRG7PH50K10D-EPBF-InternationalRectifier.pdf
Datasheet Details
Part number:
IRG7PH50K10D-EPBF
Manufacturer:
International Rectifier
File Size:
567.79 KB
Description:
Insulated gate bipolar transistor.
IRG7PH50K10D-EPBF, INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH50K10D-EPBF Features
* Low VCE(ON) and switching losses 10µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 150°C Positive VCE (ON) Temperature Coefficient Base part number IRG7PH50K10DPBF IRG7PH50K10D-EPBF Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC =
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