IRG7PH50U-EP - INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

Datasheet Details

Part number	IRG7PH50U-EP
Manufacturer	International Rectifier
File Size	384.59 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRG7PH50U-EP-InternationalRectifier.pdf

Low VCE (ON) trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient Tight parameter distribution Lead -Free C IRG7PH50UPbF IRG7PH50U-EP VCES = 1200V IC = 90A, TC = 100°C G E TJ(max) =175°C n-channel VCE(on) typ. = 1.7V Benefits.
High efficiency in a wide range of.

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Published: Mar 31, 2014 |