| Image | Manufacturer | B2B MPN | Description | Distributor | Stock | Quantity | Price | Buy Now |
|---|---|---|---|---|---|---|---|---|
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Infineon Technologies AG | IRG7PH50U-EP | IGBT TRENCH 1200V 140A TO247AD | DigiKey | 0 | 0 |
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Download Datasheet (384.59 KB)
IRG7PH50U-EP
International Rectifier
384.59 KB
Insulated gate bipolar transistor.
PD - 97549
INSULATED GATE BIPOLAR TRANSISTOR Features
* * * * * * * * Low VCE (ON) trench IGBT tech.
nology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts teste.
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