Datasheet4U Logo Datasheet4U.com

IRGMC30F Datasheet - International Rectifier

IRGMC30F_InternationalRectifier.pdf

Preview of IRGMC30F PDF
IRGMC30F Datasheet Preview Page 2 IRGMC30F Datasheet Preview Page 3

Datasheet Details

Part number:

IRGMC30F

Manufacturer:

International Rectifier

File Size:

569.62 KB

Description:

Insulated gate bipolar transistor.

IRGMC30F, INSULATED GATE BIPOLAR TRANSISTOR

n-channel Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.

They provide substantial benefits to a host of hig

IRGMC30F Features

* Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz High operating frequency Switching-loss rating includes all "tail" losses C Fast Speed IGBT VCES = 600V G E VCE(on) ma

📁 Related Datasheet

📌 All Tags

International Rectifier IRGMC30F-like datasheet