IRGMC30F Datasheet - International Rectifier

INSULATED GATE BIPOLAR TRANSISTOR

IRGMC30F Features

* Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz High operating frequency Switching-loss rating includes all "tail" losses C Fast Speed IGBT VCES = 600V G E VCE(on) ma

IRGMC30F General Description

n-channel Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of hig.

IRGMC30F Datasheet (569.62 KB)

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Datasheet Details

Part number:

IRGMC30F

Manufacturer:

International Rectifier

File Size:

569.62 KB

Description:

Insulated gate bipolar transistor.

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IRGMC30F INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

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IRGMC30F Features

IRGMC30F General Description

Datasheet Details

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