IRGMC40U INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

Description

PD -90717B IRGMC40U INSULATED GATE BIPOLAR TRANSISTOR .
n-channel Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar trans.

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Datasheet Specifications

Part number: IRGMC40U
Manufacturer: International Rectifier
File Size: 582.69 KB
Datasheet: IRGMC40U_InternationalRectifier.pdf
Description: INSULATED GATE BIPOLAR TRANSISTOR

Features

* Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation > 10 kHz Switching-loss rating includes all "tail" losses C Ultra Fast Speed IGBT VCES = 600V G E VCE(on) max = 2.0V @VGE = 15V, IC = 20A Des

Applications

* The performance of various IGBTs varies greatly with frequency. Note that IR now provides the designer with a speed benchmark (fIc/2, or the "half-current frequency "), as well as an indication of the current handlingwww. DataSheet4U. com capability of the device. TO-254AA Absolute Maximum Ratings

IRGMC40U Distributors

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IRGMC40U INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

International Rectifier IRGMC40U-like datasheet