Datasheet Details
Part number:
IRGMC50F
Manufacturer:
International Rectifier
File Size:
574.07 KB
Description:
Insulated gate bipolar transistor.
IRGMC50F_InternationalRectifier.pdf
Datasheet Details
Part number:
IRGMC50F
Manufacturer:
International Rectifier
File Size:
574.07 KB
Description:
Insulated gate bipolar transistor.
IRGMC50F, INSULATED GATE BIPOLAR TRANSISTOR
n-channel Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.
They provide substantial benefits to a host of hig
IRGMC50F Features
* Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz Switching-loss rating includes all "tail" losses C Fast Speed IGBT VCES = 600V G E VCE(on) max = 1.7V @VGE = 15V, IC = 30A Desc
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