IRGMC50F INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

Description

www.DataSheet4U.com PD -90718B IRGMC50F INSULATED GATE BIPOLAR TRANSISTOR .
n-channel Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar trans.

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Datasheet Specifications

Part number: IRGMC50F
Manufacturer: International Rectifier
File Size: 574.07 KB
Datasheet: IRGMC50F_InternationalRectifier.pdf
Description: INSULATED GATE BIPOLAR TRANSISTOR

Features

* Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz Switching-loss rating includes all "tail" losses C Fast Speed IGBT VCES = 600V G E VCE(on) max = 1.7V @VGE = 15V, IC = 30A Desc

Applications

* The performance of various IGBTs varies greatly with frequency. Note that IR now provides the designer with a speed benchmark (fIc/2, or the "half-current frequency "), as well as an indication of the current handling capability of the device. TO-254AA Absolute Maximum Ratings Parameter VCES IC @

IRGMC50F Distributors

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IRGMC50F INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

International Rectifier IRGMC50F-like datasheet