IRGMC50F Datasheet - International Rectifier

INSULATED GATE BIPOLAR TRANSISTOR

IRGMC50F Features

* Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz Switching-loss rating includes all "tail" losses C Fast Speed IGBT VCES = 600V G E VCE(on) max = 1.7V @VGE = 15V, IC = 30A Desc

IRGMC50F General Description

n-channel Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of hig.

IRGMC50F Datasheet (574.07 KB)

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Datasheet Details

Part number:

IRGMC50F

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International Rectifier

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574.07 KB

Description:

Insulated gate bipolar transistor.

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IRGMC50F INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

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IRGMC50F Features

IRGMC50F General Description

Datasheet Details

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