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IRGMC30U INSULATED GATE BIPOLAR TRANSISTOR

IRGMC30U Description

www.DataSheet4U.com PD -90715B IRGMC30U INSULATED GATE BIPOLAR TRANSISTOR .
n-channel Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar trans.

IRGMC30U Features

* Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation > 10 kHz Switching-loss rating includes all "tail" losses C Ultra Fast Speed IGBT VCES = 600V G E VCE(on) max = 3.0V @VGE = 15V, IC = 8.0A De

IRGMC30U Applications

* The performance of various IGBTs varies greatly with frequency. Note that IR now provides the designer with a speed benchmark (fIc/2, or the "half-current frequency "), as well as an indication of the current handling capability of the device. TO-254AA Absolute Maximum Ratings Parameter VCES IC @

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Datasheet Details

Part number
IRGMC30U
Manufacturer
International Rectifier
File Size
571.63 KB
Datasheet
IRGMC30U_InternationalRectifier.pdf
Description
INSULATED GATE BIPOLAR TRANSISTOR

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INSULATED GATE BIPOLAR TRANSISTOR International Rectifier
International Rectifier IRGMC30U-like datasheet