IRGMC30U Datasheet (International Rectifier) - INSULATED GATE BIPOLAR TRANSISTOR

IRGMC30U, INSULATED GATE BIPOLAR TRANSISTOR

n-channel Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.

They provide substantial benefits to a host of hig

IRGMC30U Features

* Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation > 10 kHz Switching-loss rating includes all "tail" losses C Ultra Fast Speed IGBT VCES = 600V G E VCE(on) max = 3.0V @VGE = 15V, IC = 8.0A De