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IRGMC30U Datasheet - International Rectifier

INSULATED GATE BIPOLAR TRANSISTOR

IRGMC30U Features

* Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation > 10 kHz Switching-loss rating includes all "tail" losses C Ultra Fast Speed IGBT VCES = 600V G E VCE(on) max = 3.0V @VGE = 15V, IC = 8.0A De

IRGMC30U General Description

n-channel Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of hig.

IRGMC30U Datasheet (571.63 KB)

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Datasheet Details

Part number:

IRGMC30U

Manufacturer:

International Rectifier

File Size:

571.63 KB

Description:

Insulated gate bipolar transistor.

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Infineon Technologies AG

SPP11N60S5XKSA1

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IRGMC30U INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

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IRGMC30U Features

IRGMC30U General Description

Datasheet Details

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