IRGMVC50U INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

Description

www.DataSheet4U.com PD -90825A IRGMVC50U INSULATED GATE BIPOLAR TRANSISTOR WITH ON-BOARD REVERSE DIODE .
n-ch an nel Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar tra.

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Datasheet Specifications

Part number: IRGMVC50U
Manufacturer: International Rectifier
File Size: 576.31 KB
Datasheet: IRGMVC50U_InternationalRectifier.pdf
Description: INSULATED GATE BIPOLAR TRANSISTOR

Features

* Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Ultra Fast operation > 10 kHz Switching-loss rating includes all "tail" losses Ceramic Eyelets C Ultra Fast Speed IGBT VCES = 600V G E VCE(on) max = 3.0V

Applications

* The performance of various IGBTs varies greatly with frequency. Note that IR now provides the designer with a speed benchmark (fIc/2, or the "half-current frequency "), as well as an indication of the current handling capability of the device. Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C

IRGMVC50U Distributors

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IRGMVC50U INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

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