IRGMVC50U Datasheet - International Rectifier

INSULATED GATE BIPOLAR TRANSISTOR

IRGMVC50U Features

* Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Ultra Fast operation > 10 kHz Switching-loss rating includes all "tail" losses Ceramic Eyelets C Ultra Fast Speed IGBT VCES = 600V G E VCE(on) max = 3.0V

IRGMVC50U General Description

n-ch an nel Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of h.

IRGMVC50U Datasheet (580.63 KB)

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Datasheet Details

Part number:

IRGMVC50U

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International Rectifier

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580.63 KB

Description:

Insulated gate bipolar transistor.

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IRGMVC50U INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

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IRGMVC50U Features

IRGMVC50U General Description

Datasheet Details

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