IRGMVC50U Datasheet (International Rectifier) - INSULATED GATE BIPOLAR TRANSISTOR

IRGMVC50U, INSULATED GATE BIPOLAR TRANSISTOR

n-ch an nel Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.

They provide substantial benefits to a host of h

IRGMVC50U Features

* Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Ultra Fast operation > 10 kHz Switching-loss rating includes all "tail" losses Ceramic Eyelets C Ultra Fast Speed IGBT VCES = 600V G E VCE(on) max = 3.0V