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IRGSL8B60K, IRGB8B60K INSULATED GATE BIPOLAR TRANSISTOR

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Description

PD - 94545C INSULATED GATE BIPOLAR TRANSISTOR .

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This datasheet PDF includes multiple part numbers: IRGSL8B60K, IRGB8B60K. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
IRGSL8B60K, IRGB8B60K
Manufacturer
International Rectifier
File Size
472.11 KB
Datasheet
IRGB8B60K_InternationalRectifier.pdf
Description
INSULATED GATE BIPOLAR TRANSISTOR
Note
This datasheet PDF includes multiple part numbers: IRGSL8B60K, IRGB8B60K.
Please refer to the document for exact specifications by model.

Features

* Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. C IRGB8B60K IRGS8B60K IRGSL8B60K VCES = 600V IC = 20A, TC=100°C G E tsc>10µs, TJ=150°C Benefits
* Benchmark Effic

IRGSL8B60K Distributors

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International Rectifier IRGSL8B60K-like datasheet