| Image | Manufacturer | B2B MPN | Description | Distributor | Stock | Quantity | Price | Buy Now |
|---|---|---|---|---|---|---|---|---|
 |
Infineon Technologies AG | JANSR2N7489T3-03 | Transistor MOSFET N-Channel 200V 12A 3-Pin TO-257AA - Bulk (Alt: JANSR2N7489T3-03) | Avnet Americas | 0 | 0 |
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JANSR2N7489T3 Datasheet (171.28 KB)
JANSR2N7489T3
International Rectifier
171.28 KB
Radiation hardened power mosfet.
PD - 93822B
IRHY57230CMSE
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)
JANSR2N7489T3 200V, N-CHANNEL REF:MIL-PRF-19500/705
Product Summary.
* n Single Event Effect (SEE) Hardened n Ultra Low RDS(on) n Low Total Gate Charge n Proton Tolerant n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Ceramic Package n Light Weight Absolute Maximum Ratings Pre-Irradiation Parameter Units ID @ VGS = 12V, TC = 25°C Continu
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