JANSR2N7489T3 Datasheet - International Rectifier

JANSR2N7489T3 RADIATION HARDENED POWER MOSFET

PD - 93822B IRHY57230CMSE RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) JANSR2N7489T3 200V, N-CHANNEL REF:MIL-PRF-19500/705 Product Summary 5 TECHNOLOGY Part Number Radiation Level RDS(on) ID QPL Part Number IRHY57230CMSE 100K Rads (Si) 0.23Ω 12A JANSR2N7489T3 International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (M.

JANSR2N7489T3 Features

* n Single Event Effect (SEE) Hardened n Ultra Low RDS(on) n Low Total Gate Charge n Proton Tolerant n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Ceramic Package n Light Weight Absolute Maximum Ratings Pre-Irradiation Parameter Units ID @ VGS = 12V, TC = 25°C Continu

JANSR2N7489T3 Datasheet (171.28 KB)

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Datasheet Details

Part number:

JANSR2N7489T3

Manufacturer:

International Rectifier

File Size:

171.28 KB

Description:

Radiation hardened power mosfet.

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JANSR2N7489T3 RADIATION HARDENED POWER MOSFET International Rectifier

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