IRF6608 - lHEXFET Power MOSFET

International Rectifier

IRF6608 Datasheet Preview — Preview of IRF6608 PDF

Datasheet Details

Part number	IRF6608
Manufacturer	International Rectifier ↗
File Size	178.75 KB
Description	lHEXFET Power MOSFET
Datasheet	IRF6608_InternationalRectifier.pdf

IRF6608 Product details

Description

The IRF6608 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile.

Features

ng Time Waveforms Id Vds Vgs 50KΩ 12V .2µF .3µF D. U. T. VGS 3mA + V - DS Vgs(th) IG ID Current Sampling Resistors Qgs1 Qgs2 Qgd Qgodr Fig 15. Gate Charge Test Circuit Fig 16. Gate Charge Waveform www. irf. com 5 IRF6608 D. U. T Driver Gate Drive + P. W. Period D= P. W. Period VGS=10V.
+ Circuit Layout Considerations.
Low Stray Inductance.
Ground Plane.
Low Leakage Inductance Current Transformer.
D. U. T. ISD Waveform Reverse Recovery Current Bo.

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Published: Apr 16, 2005 |