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IRF7104PBF HEXFET Power MOSFET

IRF7104PBF Description

PD - 95254 IRF7104PbF l l l l l l l l Adavanced Process Technology Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Available in Tape & R.
Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon.

IRF7104PBF Applications

* www. DataSheet4U. com The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board spa

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HEXFET Power MOSFET International Rectifier
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