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IRF8304MPBF - Power MOSFET

IRF8304MPBF Description

IRF8304MPbF l RoHS Compliant and Halogen Free  l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible  l Ultra Low Package Inductance l Optimized .
The IRF8304MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging to achieve the lowest on-state resi.

IRF8304MPBF Features

* 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 VSD, Source-to-Drain Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage ID, Drain-to-Source Current (A) IRF8304MPbF 1000 100 OPERATION IN THIS AREA LIMITED BY R DS(on) 100µsec 10 1msec 1 10msec DC 0.1 TA = 25°C TJ = 150°C Single Pulse 0.01

IRF8304MPBF Applications

* PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET® package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best

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International Rectifier IRF8304MPBF-like datasheet