Datasheet4U Logo Datasheet4U.com

IRFD214 - Power MOSFET

IRFD214 Description

HEXFET® Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of paralleling Simple D.
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low.

📥 Download Datasheet

Preview of IRFD214 PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • IRFD210 - N-Channel Power MOSFET (Intersil Corporation)
  • IRFD211 - FIELD EFFECT POWER TRANSISTOR (GE)
  • IRFD212 - FIELD EFFECT POWER TRANSISTOR (GE)
  • IRFD213 - N-Channel Transistor (IOR)
  • IRFD220 - N-Channel Power MOSFET (Intersil Corporation)
  • IRFD221 - FIELD EFFECT POWER TRANSISTOR (GE)
  • IRFD222 - FIELD EFFECT POWER TRANSISTOR (GE)
  • IRFD223 - FIELD EFFECT POWER TRANSISTOR (GE)

📌 All Tags

Power MOSFET International Rectifier
International Rectifier IRFD214-like datasheet

IRFD214 Stock/Price