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IRG4IBC20UDPBF INSULATED GATE BIPOLAR TRANSISTOR

IRG4IBC20UDPBF Description

PD -94917A IRG4IBC20UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast CoPack IGBT ULTRAFAST SOFT RECOVERY DIODE .

IRG4IBC20UDPBF Features

* C
* 2.5kV, 60s insulation voltage …
* 4.8 mm creapage distance to heatsink VCES = 600V
* UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode
* IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery antip

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INSULATED GATE BIPOLAR TRANSISTOR International Rectifier
International Rectifier IRG4IBC20UDPBF-like datasheet