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IRGBC40F INSULATED GATE BIPOLAR TRANSISTOR

IRGBC40F Description

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Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, whil.

IRGBC40F Features

* Switching-loss rating includes all "tail" losses

IRGBC40F Applications

* TO-220AB Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Vol

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Datasheet Details

Part number
IRGBC40F
Manufacturer
International Rectifier
File Size
189.96 KB
Datasheet
IRGBC40F_InternationalRectifier.pdf
Description
INSULATED GATE BIPOLAR TRANSISTOR

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INSULATED GATE BIPOLAR TRANSISTOR International Rectifier
International Rectifier IRGBC40F-like datasheet