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IRGVH50F INSULATED GATE BIPOLAR TRANSISTOR

IRGVH50F Description

www.DataSheet4U.com PD -90928A IRGVH50F INSULATED GATE BIPOLAR TRANSISTOR .
n-channel Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar trans.

IRGVH50F Features

* Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz High operating frequency Switching-loss rating includes all "tail" losses C Fast Speed IGBT VCES = 1200V G E VCE(on) m

IRGVH50F Applications

* The performance of various IGBTs varies greatly with frequency. Note that IR now provides the designer with a speed benchmark (fIc/2, or the "half-current frequency "), as well as an indication of the current handling capability of the device. TO-258AA Absolute Maximum Ratings Parameter VCES IC @

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Datasheet Details

Part number
IRGVH50F
Manufacturer
International Rectifier
File Size
561.39 KB
Datasheet
IRGVH50F_InternationalRectifier.pdf
Description
INSULATED GATE BIPOLAR TRANSISTOR

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INSULATED GATE BIPOLAR TRANSISTOR International Rectifier
International Rectifier IRGVH50F-like datasheet