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FSL430D - N-Channel Power MOSFET

FSL430D Description

FSL430D, FSL430R June 1998 2A, 500V, 2.50 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs .
The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military spac.

FSL430D Features

* 2A, 500V, rDS(ON) = 2.50Ω
* Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si)
* Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias
* Dose Rate

FSL430D Applications

* Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military applica

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Datasheet Details

Part number
FSL430D
Manufacturer
Intersil Corporation
File Size
46.86 KB
Datasheet
FSL430D_IntersilCorporation.pdf
Description
N-Channel Power MOSFET

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N-Channel Power MOSFET Intersil Corporation
Intersil Corporation FSL430D-like datasheet

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