FSL430D N-Channel Power MOSFET

Intersil Corporation

Description

FSL430D, FSL430R June 1998 2A, 500V, 2.50 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs .
The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs speciﬁcally designed for commercial and military spac.

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Datasheet Specifications

Part number: FSL430D
Manufacturer: Intersil Corporation
File Size: 46.86 KB
Datasheet: FSL430D_IntersilCorporation.pdf
Description: N-Channel Power MOSFET

Features

* 2A, 500V, rDS(ON) = 2.50Ω
* Total Dose - Meets Pre-RAD Speciﬁcations to 100K RAD (Si)
* Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias
* Dose Rate

Applications

* Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military applica

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FSL430D N-Channel Power MOSFET Intersil Corporation

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